Tin (Sn) - An Unlikely Ally to Extend Moore's Law for Silicon CMOS?

Handle URI:
http://hdl.handle.net/10754/255093
Title:
Tin (Sn) - An Unlikely Ally to Extend Moore's Law for Silicon CMOS?
Authors:
Hussain, Aftab M.
Abstract:
There has been an exponential increase in the performance of silicon based semiconductor devices in the past few decades. This improvement has mainly been due to dimensional scaling of the MOSFET. However, physical constraints limit the continued growth in device performance. To overcome this problem, novel channel materials are being developed to enhance carrier mobility and hence increase device performance. This work explores a novel semiconducting alloy - Silicon-tin (SiSn) as a channel material for CMOS applications. For the first time ever, MOS devices using SiSn as channel material have been demonstrated. A low cost, scalable and manufacturable process for obtaining SiSn by diffusion of Sn into silicon has also been explored. The channel material thus obtained is electrically characterized by fabricating MOSCAPs and Mesa-shaped MOSFETs. The SiSn devices have been compared to similar devices fabricated using silicon as channel material.
Advisors:
Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Committee Member:
Amassian, Aram ( 0000-0002-5734-1194 ) ; Foulds, Ian G.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Program:
Electrical Engineering
Issue Date:
Dec-2012
Type:
Thesis
Appears in Collections:
Theses; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.advisorHussain, Muhammad Mustafaen
dc.contributor.authorHussain, Aftab M.en
dc.date.accessioned2012-12-10T13:23:36Z-
dc.date.available2012-12-10T13:23:36Z-
dc.date.issued2012-12en
dc.identifier.urihttp://hdl.handle.net/10754/255093en
dc.description.abstractThere has been an exponential increase in the performance of silicon based semiconductor devices in the past few decades. This improvement has mainly been due to dimensional scaling of the MOSFET. However, physical constraints limit the continued growth in device performance. To overcome this problem, novel channel materials are being developed to enhance carrier mobility and hence increase device performance. This work explores a novel semiconducting alloy - Silicon-tin (SiSn) as a channel material for CMOS applications. For the first time ever, MOS devices using SiSn as channel material have been demonstrated. A low cost, scalable and manufacturable process for obtaining SiSn by diffusion of Sn into silicon has also been explored. The channel material thus obtained is electrically characterized by fabricating MOSCAPs and Mesa-shaped MOSFETs. The SiSn devices have been compared to similar devices fabricated using silicon as channel material.en
dc.language.isoenen
dc.subjectSiliconen
dc.subjectTinen
dc.subjectDiffusionen
dc.subjectCMOSen
dc.titleTin (Sn) - An Unlikely Ally to Extend Moore's Law for Silicon CMOS?en
dc.typeThesisen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
thesis.degree.grantorKing Abdullah University of Science and Technologyen_GB
dc.contributor.committeememberAmassian, Aramen
dc.contributor.committeememberFoulds, Ian G.en
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.nameMaster of Scienceen
dc.person.id118439en
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