Memristor-based memory: The sneak paths problem and solutions

Handle URI:
http://hdl.handle.net/10754/250453
Title:
Memristor-based memory: The sneak paths problem and solutions
Authors:
Zidan, Mohammed A. ( 0000-0003-3843-814X ) ; Fahmy, Hossam A.H.; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 ) ; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
In this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Sensors Lab
Citation:
Zidan MA, Fahmy HAH, Hussain MM, Salama KN (2013) Memristor-based memory: The sneak paths problem and solutions. Microelectronics Journal 44: 176-183. doi:10.1016/j.mejo.2012.10.001.
Publisher:
Elsevier BV
Journal:
Microelectronics Journal
Issue Date:
29-Oct-2012
DOI:
10.1016/j.mejo.2012.10.001
Type:
Article
ISSN:
00262692
Additional Links:
http://linkinghub.elsevier.com/retrieve/pii/S0026269212002108
Appears in Collections:
Articles; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZidan, Mohammed A.en
dc.contributor.authorFahmy, Hossam A.H.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2012-10-29T11:03:28Z-
dc.date.available2012-10-29T11:03:28Z-
dc.date.issued2012-10-29en
dc.identifier.citationZidan MA, Fahmy HAH, Hussain MM, Salama KN (2013) Memristor-based memory: The sneak paths problem and solutions. Microelectronics Journal 44: 176-183. doi:10.1016/j.mejo.2012.10.001.en
dc.identifier.issn00262692en
dc.identifier.doi10.1016/j.mejo.2012.10.001en
dc.identifier.urihttp://hdl.handle.net/10754/250453en
dc.description.abstractIn this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device.en
dc.language.isoenen
dc.publisherElsevier BVen
dc.relation.urlhttp://linkinghub.elsevier.com/retrieve/pii/S0026269212002108en
dc.rightsArchived with thanks to Microelectronics Journalen
dc.subjectmemristoren
dc.subjectnanotechnologyen
dc.titleMemristor-based memory: The sneak paths problem and solutionsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentSensors Laben
dc.identifier.journalMicroelectronics Journalen
dc.eprint.versionPost-printen
dc.contributor.institutionElectronics and Communication Department, Faculty of Engineering, Cairo University, Cairo, Egypten
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorZidan, Mohammed A.en
kaust.authorHussain, Muhammad Mustafaen
kaust.authorSalama, Khaled N.en
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