50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

Handle URI:
http://hdl.handle.net/10754/247291
Title:
50V All-PMOS Charge Pumps Using Low-Voltage Capacitors
Authors:
Emira, Ahmed; AbdelGhany, M.; Elsayed, M.; Elshurafa, Amro M.; Sedky, S.; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Sensors Lab
Citation:
Emira A, AbdelGhany M, Elsayed M, Elshurafa AM, Sedky S, et al. (2013) All-pMOS 50-V Charge Pumps Using Low-Voltage Capacitors. IEEE Trans Ind Electron 60: 4683-4693. doi:10.1109/TIE.2012.2213674.
Publisher:
Institute of Electrical and Electronics Engineers
Journal:
IEEE Transactions on Industrial Electronics
Issue Date:
6-Oct-2012
DOI:
10.1109/TIE.2012.2213674
Type:
Article
ISSN:
0278-0046; 1557-9948
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6272344
Appears in Collections:
Articles; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorEmira, Ahmeden
dc.contributor.authorAbdelGhany, M.en
dc.contributor.authorElsayed, M.en
dc.contributor.authorElshurafa, Amro M.en
dc.contributor.authorSedky, S.en
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2012-10-06T00:43:23Z-
dc.date.available2012-10-06T00:43:23Z-
dc.date.issued2012-10-06en
dc.identifier.citationEmira A, AbdelGhany M, Elsayed M, Elshurafa AM, Sedky S, et al. (2013) All-pMOS 50-V Charge Pumps Using Low-Voltage Capacitors. IEEE Trans Ind Electron 60: 4683-4693. doi:10.1109/TIE.2012.2213674.en
dc.identifier.issn0278-0046en
dc.identifier.issn1557-9948en
dc.identifier.doi10.1109/TIE.2012.2213674en
dc.identifier.urihttp://hdl.handle.net/10754/247291en
dc.description.abstractIn this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6272344en
dc.rightsArchived with thanks to IEEE Transactions on Industrial Electronicsen
dc.subjectcharge pumpen
dc.subjectDC-DCen
dc.subjectmemsen
dc.title50V All-PMOS Charge Pumps Using Low-Voltage Capacitorsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentSensors Laben
dc.identifier.journalIEEE Transactions on Industrial Electronicsen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Electronics and Communications Engineering, Faculty of Engineering, Cairo University, Giza 12613, Egypten
dc.contributor.institutionMcGill University, Montreal, QC H3A 0G4, Canadaen
dc.contributor.institutionZewail University, Cairo 11461, Egypten
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorElshurafa, Amro M.en
kaust.authorSalama, Khaled N.en
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