Enhanced terahertz detection using multiple GaAs HEMTs connected in series

Handle URI:
http://hdl.handle.net/10754/236093
Title:
Enhanced terahertz detection using multiple GaAs HEMTs connected in series
Authors:
Elkhatib, Tamer A.; Veksler, Dmitry B.; Salama, Khaled N. ( 0000-0001-7742-1282 ) ; Zhang, Xi-C.; Shur, Michael S.
Abstract:
We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Sensors Lab
Citation:
Elkhatib TA, Veksler DB, Salama KN, Zhang X-C, Shur MS (2009) Enhanced terahertz detection using multiple GaAs HEMTs connected in series. 2009 IEEE MTT-S International Microwave Symposium Digest. doi:10.1109/MWSYM.2009.5165852.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2009 IEEE MTT-S International Microwave Symposium Digest
Conference/Event name:
2009 IEEE MTT-S International Microwave Symposium, IMS 2009
Issue Date:
28-Jul-2012
DOI:
10.1109/MWSYM.2009.5165852
Type:
Conference Paper
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5165852
Appears in Collections:
Conference Papers; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorElkhatib, Tamer A.en
dc.contributor.authorVeksler, Dmitry B.en
dc.contributor.authorSalama, Khaled N.en
dc.contributor.authorZhang, Xi-C.en
dc.contributor.authorShur, Michael S.en
dc.date.accessioned2012-07-28T10:22:58Z-
dc.date.available2012-07-28T10:22:58Z-
dc.date.issued2012-07-28en
dc.identifier.citationElkhatib TA, Veksler DB, Salama KN, Zhang X-C, Shur MS (2009) Enhanced terahertz detection using multiple GaAs HEMTs connected in series. 2009 IEEE MTT-S International Microwave Symposium Digest. doi:10.1109/MWSYM.2009.5165852.en
dc.identifier.doi10.1109/MWSYM.2009.5165852en
dc.identifier.urihttp://hdl.handle.net/10754/236093en
dc.description.abstractWe report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5165852en
dc.titleEnhanced terahertz detection using multiple GaAs HEMTs connected in seriesen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentSensors Laben
dc.identifier.journal2009 IEEE MTT-S International Microwave Symposium Digesten
dc.conference.date7 June 2009 through 12 June 2009en
dc.conference.name2009 IEEE MTT-S International Microwave Symposium, IMS 2009en
dc.conference.locationBoston, MAen
kaust.authorSalama, Khaled N.en
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