Differential RF MEMS interwoven capacitor immune to residual stress warping

Handle URI:
http://hdl.handle.net/10754/236031
Title:
Differential RF MEMS interwoven capacitor immune to residual stress warping
Authors:
Elshurafa, Amro M.; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
A RF MEMS capacitor with an interwoven structure is designed, fabricated in the PolyMUMPS process and tested in an effort to address fabrication challenges usually faced in MEMS processes. The interwoven structure was found to offer several advantages over the typical MEMS parallel-plate design including eliminating the warping caused by residual stress, eliminating the need for etching holes, suppressing stiction, reducing parasitics and providing differential capability. The quality factor of the proposed capacitor was higher than five throughout a 2–10 GHz range and the resonant frequency was in excess of 20 GHz.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Sensors Lab
Citation:
Elshurafa AM, Salama KN (2012) Differential RF MEMS interwoven capacitor immune to residual stress warping. Micro & Nano Letters 7: 658. doi:10.1049/mnl.2012.0400.
Publisher:
Institution of Engineering and Technology (IET)
Journal:
Micro & Nano Letters
Issue Date:
27-Jul-2012
DOI:
10.1049/mnl.2012.0400
Type:
Article
ISSN:
17500443
Additional Links:
http://link.aip.org/link/MNLIBX/v7/i7/p658/s1&Agg=doi
Appears in Collections:
Articles; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorElshurafa, Amro M.en
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2012-07-27T21:24:05Z-
dc.date.available2012-07-27T21:24:05Z-
dc.date.issued2012-07-27en
dc.identifier.citationElshurafa AM, Salama KN (2012) Differential RF MEMS interwoven capacitor immune to residual stress warping. Micro & Nano Letters 7: 658. doi:10.1049/mnl.2012.0400.en
dc.identifier.issn17500443en
dc.identifier.doi10.1049/mnl.2012.0400en
dc.identifier.urihttp://hdl.handle.net/10754/236031en
dc.description.abstractA RF MEMS capacitor with an interwoven structure is designed, fabricated in the PolyMUMPS process and tested in an effort to address fabrication challenges usually faced in MEMS processes. The interwoven structure was found to offer several advantages over the typical MEMS parallel-plate design including eliminating the warping caused by residual stress, eliminating the need for etching holes, suppressing stiction, reducing parasitics and providing differential capability. The quality factor of the proposed capacitor was higher than five throughout a 2–10 GHz range and the resonant frequency was in excess of 20 GHz.en
dc.language.isoenen
dc.publisherInstitution of Engineering and Technology (IET)en
dc.relation.urlhttp://link.aip.org/link/MNLIBX/v7/i7/p658/s1&Agg=doien
dc.rightsArchived with thanks to Micro & Nano Lettersen
dc.titleDifferential RF MEMS interwoven capacitor immune to residual stress warpingen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentSensors Laben
dc.identifier.journalMicro & Nano Lettersen
dc.contributor.institutionMINT Center, University of Alabama, Tuscaloosa, AL, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorElshurafa, Amro M.en
kaust.authorSalama, Khaled N.en
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