Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

Handle URI:
http://hdl.handle.net/10754/235691
Title:
Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior
Authors:
Useinov, Arthur; Mryasov, Oleg; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.
KAUST Department:
Biological and Environmental Sciences and Engineering (BESE) Division
Citation:
Useinov A, Mryasov O, Kosel J (2012) Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior. Journal of Magnetism and Magnetic Materials 324: 2844-2848. doi:10.1016/j.jmmm.2012.04.025.
Publisher:
Elsevier BV
Journal:
Journal of Magnetism and Magnetic Materials
Issue Date:
22-Oct-2011
DOI:
10.1016/j.jmmm.2012.04.025
Type:
Article
ISSN:
03048853
Additional Links:
http://linkinghub.elsevier.com/retrieve/pii/S0304885312003721
Appears in Collections:
Articles; Biological and Environmental Sciences and Engineering (BESE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorUseinov, Arthuren
dc.contributor.authorMryasov, Olegen
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2012-07-25T08:12:18Zen
dc.date.available2012-07-25T08:12:18Zen
dc.date.issued2011-10-22en
dc.identifier.citationUseinov A, Mryasov O, Kosel J (2012) Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior. Journal of Magnetism and Magnetic Materials 324: 2844-2848. doi:10.1016/j.jmmm.2012.04.025.en
dc.identifier.issn03048853en
dc.identifier.doi10.1016/j.jmmm.2012.04.025en
dc.identifier.urihttp://hdl.handle.net/10754/235691en
dc.description.abstractIn this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.en
dc.language.isoenen
dc.publisherElsevier BVen
dc.relation.urlhttp://linkinghub.elsevier.com/retrieve/pii/S0304885312003721en
dc.rightsArchived with thanks to Journal of Magnetism and Magnetic Materialsen
dc.titleOutput voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavioren
dc.typeArticleen
dc.contributor.departmentBiological and Environmental Sciences and Engineering (BESE) Divisionen
dc.identifier.journalJournal of Magnetism and Magnetic Materialsen
dc.contributor.institutionMINT Center, University of Alabama, Tuscaloosa, AL, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorUseinov, Arthuren
kaust.authorKosel, Jürgenen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.