Low voltage RF MEMS variable capacitor with linear C-V response

Handle URI:
http://hdl.handle.net/10754/235133
Title:
Low voltage RF MEMS variable capacitor with linear C-V response
Authors:
Elshurafa, Amro M.; Ho, Pak Hung; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
An RF MEMS variable capacitor, fabricated in the PolyMUMPS process and tuned electrostatically, possessing a linear capacitance-voltage response is reported. The measured quality factor of the device was 17 at 1GHz, while the tuning range was 1.2:1 and was achieved at an actuation DC voltage of 8V only. Further, the linear regression coefficient was 0.98. The variable capacitor was created such that it has both vertical and horizontal capacitances present. As the top suspended plate moves towards the bottom fixed plate, the vertical capacitance increases whereas the horizontal capacitance decreases simultaneously such that the sum of the two capacitances yields a linear capacitance-voltage relation. © 2012 The Institution of Engineering and Technology.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Sensors Lab
Citation:
Elshurafa AM, Ho PH, Salama KN (2012) Low voltage RF MEMS variable capacitor with linear C-V response. Electronics Letters 48: 392. doi:10.1049/el.2011.3340.
Publisher:
Institution of Engineering and Technology
Journal:
Electronics Letters
Issue Date:
23-Jul-2012
DOI:
10.1049/el.2011.3340
Type:
Article
ISSN:
00135194
Additional Links:
http://link.aip.org/link/ELLEAK/v48/i7/p392/s1&Agg=doi
Appears in Collections:
Articles; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorElshurafa, Amro M.en
dc.contributor.authorHo, Pak Hungen
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2012-07-23T10:09:15Z-
dc.date.available2012-07-23T10:09:15Z-
dc.date.issued2012-07-23en
dc.identifier.citationElshurafa AM, Ho PH, Salama KN (2012) Low voltage RF MEMS variable capacitor with linear C-V response. Electronics Letters 48: 392. doi:10.1049/el.2011.3340.en
dc.identifier.issn00135194en
dc.identifier.doi10.1049/el.2011.3340en
dc.identifier.urihttp://hdl.handle.net/10754/235133en
dc.description.abstractAn RF MEMS variable capacitor, fabricated in the PolyMUMPS process and tuned electrostatically, possessing a linear capacitance-voltage response is reported. The measured quality factor of the device was 17 at 1GHz, while the tuning range was 1.2:1 and was achieved at an actuation DC voltage of 8V only. Further, the linear regression coefficient was 0.98. The variable capacitor was created such that it has both vertical and horizontal capacitances present. As the top suspended plate moves towards the bottom fixed plate, the vertical capacitance increases whereas the horizontal capacitance decreases simultaneously such that the sum of the two capacitances yields a linear capacitance-voltage relation. © 2012 The Institution of Engineering and Technology.en
dc.language.isoenen
dc.publisherInstitution of Engineering and Technologyen
dc.relation.urlhttp://link.aip.org/link/ELLEAK/v48/i7/p392/s1&Agg=doien
dc.rightsArchived with thanks to Electronics Lettersen
dc.subjectMEMSen
dc.subjectcapacitoren
dc.titleLow voltage RF MEMS variable capacitor with linear C-V responseen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentSensors Laben
dc.identifier.journalElectronics Lettersen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorElshurafa, Amro M.en
kaust.authorSalama, Khaled N.en
kaust.authorHo, Pak Hungen
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