RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

Handle URI:
http://hdl.handle.net/10754/235131
Title:
RF MEMS Fractal Capacitors With High Self-Resonant Frequencies
Authors:
Elshurafa, Amro M.; Emira, Ahmed; Radwan, Ahmed Gomaa; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention. © 2011 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Sensors Lab
Citation:
Elshurafa AM, Radwan AG, Emira A, Salama KN (2012) RF MEMS Fractal Capacitors With High Self-Resonant Frequencies. Journal of Microelectromechanical Systems 21: 10-12. doi:10.1109/JMEMS.2011.2175367.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
Journal of Microelectromechanical Systems
Issue Date:
23-Jul-2012
DOI:
10.1109/JMEMS.2011.2175367
Type:
Article
ISSN:
1057-7157; 1941-0158
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6095305
Appears in Collections:
Articles; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorElshurafa, Amro M.en
dc.contributor.authorEmira, Ahmeden
dc.contributor.authorRadwan, Ahmed Gomaaen
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2012-07-23T10:03:55Z-
dc.date.available2012-07-23T10:03:55Z-
dc.date.issued2012-07-23en
dc.identifier.citationElshurafa AM, Radwan AG, Emira A, Salama KN (2012) RF MEMS Fractal Capacitors With High Self-Resonant Frequencies. Journal of Microelectromechanical Systems 21: 10-12. doi:10.1109/JMEMS.2011.2175367.en
dc.identifier.issn1057-7157en
dc.identifier.issn1941-0158en
dc.identifier.doi10.1109/JMEMS.2011.2175367en
dc.identifier.urihttp://hdl.handle.net/10754/235131en
dc.description.abstractThis letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention. © 2011 IEEE.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6095305en
dc.rightsArchived with thanks to Journal of Microelectromechanical Systemsen
dc.subjectMEMSen
dc.subjectFractalen
dc.subjectRFen
dc.titleRF MEMS Fractal Capacitors With High Self-Resonant Frequenciesen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentSensors Laben
dc.identifier.journalJournal of Microelectromechanical Systemsen
dc.contributor.institutionCairo University, Giza 12613, Egypten
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorElshurafa, Amro M.en
kaust.authorSalama, Khaled N.en
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